SAB-C165-L25F
DESCRIPTION
- High breakdown voltage, and high reliability
- Wide area of safe operation (ASO)
- High-speed switching
APPLICATIONS
- Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse Collector Power Dissipation @ TC=25℃ Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃ isc website：.iscsemi.cn
Free Datasheet http://..
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC5244
TYP.
UNIT
VCEO(SUS)...
