Click to expand full text
SIDC06D120H8
Fast switching diode chip in Emitter Controlled Technology
Features:
1200V Emitter Controlled technology 120 µm chip
Soft, fast switching Low reverse recovery charge Small temperature coefficient Qualified according to JEDEC for target
applications
Recommended for:
Power modules and discrete devices
Applications:
SMPS, resonant applications, drives
Chip Type
VR
IFn
SIDC06D120H8 1200V 7.5A
Die Size 2.45 x 2.45 mm2
Package sawn on foil
Mechanical Parameters
Die size Area total
2.45 x 2.45 6
mm2
Anode pad size
1.73 x 1.73
Thickness
120
µm
Wafer size
200
mm
Max.
SIDC06D120H8 Datasheet
