Infineon Technologies SIGC04T60G
IGBT
| Part No. | SIGC04T60G |
|---|---|
| Datasheet | SIGC04T60G Download |
| Manufacturer |  Infineon Technologies |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
:● 600V Trench & Field Stop technology
● low VCE(sat)
● low turn-off losses
● short tail current
● positive temperature coefficient
● easy paralleling 3 This chip is used for:
● power module
● discrete components
APPLICATIONS
:● drives
● white goods
● resonant applications C G E Chip Type SIGC04T60G VCE 600V ICn 6A Die Size 1.89 x 2.17 mm2 Package sawn on foil Ordering Code Q67050A4346-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 1.89 x 2.17 1.007 x 1.33 0.361 x 0.513 4.1 / 2.15 70 150 270 3659 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient te...
