Infineon Technologies SIGC06T60
IGBT
| Part No. | SIGC06T60 |
|---|---|
| Datasheet | SIGC06T60 Download |
| Manufacturer |  Infineon Technologies |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
:● 600V Trench & Field Stop technology
● low VCE(sat)
● low turn-off losses
● short tail current
● positive temperature coefficient
● easy paralleling 3 This chip is used for:
● power module
● discrete components
APPLICATIONS
:● drives
● white goods
● resonant applications C G E Chip Type SIGC06T60 VCE 600V ICn 10A Die Size 2.42 x 2.38 mm2 Package sawn on foil Ordering Code Q67050A4331-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 2.42 x 2.38 1.672 x 1.691 0.266 x 0.266 5.8 / 3.6 70 150 0 2591 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temp...
