Infineon Technologies SIGC101T170R3E
IGBT
| Part No. | SIGC101T170R3E |
|---|---|
| Datasheet | SIGC101T170R3E Download |
| Manufacturer |  Infineon Technologies |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
:● 1700V Trench & Field Stop technology
● low turn-off losses
● short tail current
● positive temperature coefficient
● easy paralleling This chip is used for:
● power modules
APPLICATIONS
:● drives Chip Type VCE IC Die Size SIGC101T170R3E 1700V 75A 10.03 x 10.03 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 10.03 x 10.03 8 x ( 3.82 x 1.75 ) 1.309 x 0.844 mm2 100.6 190 µm 200 mm 258 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500µm 0.65mm ; max 1.2mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, IFAG IPC TD VLS, L7777M, L7777T, L7777E, Rev 2.2, 01.07.2...
