SIGC121T120R2CL Datasheet PDF

FEATURES

:
● 1200V NPT technology
● 180µm chip
● low turn-off losses
● positive temperature coefficient
● easy paralleling
● integrated gate resistor This chip is used for:
● power module BSM75GD120DLC

APPLICATIONS

:
● drives C G E Chip Type VCE ICn 75A Die Size 11.08 X 11.08 mm2 Package sawn on foil Ordering Code Q67041A4686-A003 SIGC121T120R2CL 1200V MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 11.08 X 11.08 8 x ( 2.99 x 1.97 ) 1.46 x 0.8 122.8 / 99.6 180 150 90 104 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm 2 mm grd Edited by...