Datasheet4U Logo Datasheet4U.com

SIGC12T120LE - IGBT

Description

Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved.

Features

  • 1200V Trench + Field Stop technology.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling This chip is used for:.
  • power module.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SIGC12T120L IGBT Infineon Technologies
SIGC12T120 IGBT Infineon Technologies
SIGC12T60NC IGBT Infineon Technologies
SIGC121T120R2C IGBT Infineon Technologies
SIGC121T120R2CL IGBT Infineon Technologies

Other Datasheets by Infineon

Part Number Description
SIGC12T120E IGBT
SIGC12T60SNC IGBT
SIGC128T170R3E IGBT
SIGC100T60R3E IGBT
SIGC100T65R3E IGBT

Full PDF Text Transcription

Click to expand full text
SIGC12T120LE IGBT3 Power Chip Features:  1200V Trench + Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power module Applications:  drives C G E Chip Type SIGC12T120LE VCE 1200V ICn 8A Die Size 3.54 x 3.5 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 3.54 x 3.5 2.028 x 2.028 1.107 x 0.702 mm2 12.39 / 6.
Published: |