Infineon Technologies SIGC12T60NC
The information herein is given to describe certain components and shall not be considered as warranted characteristics.| Part No. | SIGC12T60NC |
|---|---|
| Datasheet | SIGC12T60NC Download |
| Manufacturer |  Infineon Technologies |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
:● 600V NPT technology
● 100µm chip
● positive temperature coefficient
● easy paralleling C This chip is used for:
● IGBT Modules
APPLICATIONS
:● drives G E Chip Type SIGC12T60NC VCE 600V ICn 10A Die Size 3.5 x 3.5 mm2 Package sawn on foil Ordering Code Q67041-A4688A001 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 3.5 x 3.5 12.25 / 8.7 1.989 x 1.583 1.1 x 0.694 100 150 0 1219 Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm deg mm 2 Edited by INFINEON Technologies AI PS DD HV3, L 7222-M, Edition 2, 20.03.2003 Preliminary SIGC12...
