Infineon Technologies SIGC144T170R2C
The information herein is given to describe certain components and shall not be considered as warranted characteristics.| Part No. | SIGC144T170R2C |
|---|---|
| Datasheet | SIGC144T170R2C Download |
| Manufacturer |  Infineon Technologies |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
:● 1700V NPT technology
● 280µm chip
● short circuit prove
● positive temperature coefficient
● easy paralleling C This chip is used for:
● chip only
APPLICATIONS
:● drives G E Chip Type SIGC144T170R2C VCE 1700V ICn 75A Die Size 11.98 x 11.98 mm2 Package sawn on foil Ordering Code Q67041-A4696A001 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 11.98 x 11.98 143.52 / 113.6 8x ( 1.98x2.98 ) 0.757 x 1.48 280 150 90 93 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm deg mm 2 Edited by INFINEON Technologies AI PS DD HV3, L 7361M, E...
