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IGBT Chip in NPT-technology
FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling
SIGC156T60SNR2C
This chip is used for: • IGBT-Modules
Applications: • drives
C G
E
Chip Type
VCE
ICn
Die Size
SIGC156T60SNR2C 600V 200A 12.5 x 12.5 mm2
Package Ordering Code
sawn on foil
Q67050-A4154A003
MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization
Collector metallization
Die bond Wire bond Reject Ink Dot Size
Recommended Storage Environment
12.5 x 12.5
mm2
156.25 / 138.2
8x( 2.58x4.78 )
0.8 x 1.
SIGC156T60SNR2C Datasheet
