SIGC158T120R3 Datasheet PDF

FEATURES

:
● 1200V Trench + Field Stop technology
● low turn-off losses
● short tail current
● positive temperature coefficient
● easy paralleling 3 This chip is used for:
● power module C

APPLICATIONS

:
● drives G E Chip Type SIGC158T120R3 VCE ICn Die Size 12.56 x 12.56 mm2 Package sawn on foil Ordering Code Q67050A4109-A001 1200V 150A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 12.56 x 12.56 8x(2.646 x 5.454) 1.139 x 1.139 157.8 / 128.1 140 150 90 86 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm grd 2 mm Edited by INFINEON Tech...