Infineon Technologies SIGC16T120CS
The information herein is given to describe certain components and shall not be considered as warranted characteristics.| Part No. | SIGC16T120CS |
|---|---|
| Datasheet | SIGC16T120CS Download |
| Manufacturer |  Infineon Technologies |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
:● 1200V NPT technology
● 180µm chip
● short circuit prove
● positive temperature coefficient
● easy paralleling C This chip is used for:
● SGP07N120
APPLICATIONS
:● drives, SMPS, resonant applications G E Chip Type SIGC16T120CS VCE 1200V ICn 8A Die Size 4.04 x 4 mm2 Package sawn on foil Ordering Code Q67050-A4113 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 4.04 x 4 16.16 / 10.4 1.88x2.18 0.71x1.08 200 150 0 898 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm deg mm 2 Edited by INFINEON Technologies AI PS DD HV3, L 7131-S,...
