SIGC186T170R3E - IGBT

Product Overview

Infineon

Datasheet Details

Part number	SIGC186T170R3E
Manufacturer	Infineon
File Size	166.96 KB
Description	IGBT
Datasheet	SIGC186T170R3E Datasheet
Additional preview pages of the SIGC186T170R3E datasheet.

Product details

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) 2.1 Change wafer size to 200 mm 2.2 Additional basic types L7797M, L7797T, L7797E; new gate pad design Date 14.04.2010 01.07.2014 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved.Legal Disclaimer The information given in this docume

Features

1700V Trench & Field Stop technology.
low turn-off losses.
short tail current.
positive temperature coefficient.
easy paralleling This chip is used for:.
power modules.

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Published: Feb 14, 2016 |