SIGC223T120R2CS Datasheet PDF

FEATURES

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● 1200V NPT technology 175µm chip
● low turn-off losses
● short tail current
● positive temperature coefficient
● easy paralleling
● integrated gate resistor This chip is used for:
● IGBT Modules

APPLICATIONS

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● drives, SMPS, resonant applications C G E Chip Type VCE ICn Die Size 14.4 x 15.5 mm2 Package sawn on foil Ordering Code tbd SIGC223T120R2CS 1200V 150A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 14.4 X 15.5 8x( 3.67x6.77 ) 1.49 x 1.51 223.5 / 189.9 175 150 90 54 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month µm mm grd mm 2 Edited by INFINEON Technolog...