SIGC25T120CS Datasheet PDF

FEATURES

:
● 1200V NPT technology
● 180µm chip
● low turn-off losses
● short tail current
● positive temperature coefficient
● easy paralleling This chip is used for:
● C

APPLICATIONS

:
● drives, SMPS, resonant applications G E Chip Type SIGC25T120CS VCE 1200V ICn 15A Die Size 5.71 x 4.53 mm2 Package sawn on foil Ordering Code Q67050-A4114 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 5.71 x 4.53 2 x (2.18 x 1.6) 1.09 x 0.68 25.9 / 18.7 175 150 270 555 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month µm mm grd mm 2 Edited by INFINEON Technologies AI PS DD HV3, L 7141-S, Edit...