SIGC28T60 Datasheet PDF

FEATURES

:
● 600V Trench & Field Stop technology
● low VCE(sat)
● low turn-off losses
● short tail current
● positive temperature coefficient
● easy paralleling 3 This chip is used for:
● power module
● discrete components

APPLICATIONS

:
● drives C G E Chip Type SIGC28T60 VCE 600V ICn 50A Die Size 6.57 x 4.2 mm2 Package sawn on foil Ordering Code Q67050A4337-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 6.57 x 4.2 2.166 x 3.401 2.432 x 3.401 0.817 x 1.52 27.6 / 20 70 150 90 457 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm de...