SIGC42T120CS2 Datasheet PDF

FEATURES

:
● 1200V NPT technology 175µm chip
● low turn-off losses
● short tail current
● positive temperature coefficient
● easy paralleling This chip is used for:
● IGBT Modules

APPLICATIONS

:
● drives, SMPS, resonant applications C G E Chip Type SIGC42T120CS2 VCE 1200V ICn 25A Die Size 6.59 x 6.49 mm2 Package sawn on foil Ordering Code Q67050A4338-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.59 x 6.49 2 x (2.18 x 1.58) 1.06 x 0.65 42.8 / 33.5 180 150 90 334 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm grd mm 2 Edited by...