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IGBT Chip in NPT-technology
FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling
SIGC42T60SNC
This chip is used for: • IGBT-Modules
Applications: • drives
C G
E
Chip Type SIGC42T60SNC SIGC42T60SNC
VCE
ICn
Die Size
600V 50A
6.5 x 6.5 mm2
600V 50A
6.5 x 6.5 mm2
Package Ordering Code
sawn on foil unsawn
Q67050-A4181A001
Q67050-A4181A002
MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization
Collector metallization
Die bond Wire bond Reject Ink Dot Size
Recommended Storage Environment
6.5 x 6.5
mm2
42.25 / 35.6
2x( 3.0x2.85 )
0.8 x 1.
SIGC42T60SNC Datasheet
