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SIGC42T60UN
High Speed IGBT Chip in NPT-technology
FEATURES:
• low Eoff • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient easy paralleling
This chip is used for: • SGW50N60HS
Applications: • Welding • PFC • UPS
C G
E
Chip Type SIGC42T60UN
VCE
ICn
Die Size
600V 50A
6.5 x 6.5 mm2
Package Ordering Code sawn on foil SP0001-01820
MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization
Collector metallization
Die bond Wire bond Reject Ink Dot Size
Recommended Storage Environment
6.5 x 6.5
mm2
42.25 / 35.6
2x( 3.0x2.85 )
0.8 x 1.
SIGC42T60UN Datasheet
