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SIGC68T170R3E - IGBT

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version 2.1 2.2 Subjects (major changes since last revision) Change wafer size to 200 mm Additional basic types L7761M, L7761T, L7761E Published by Infi

Features

  • 1700V Trench & Field Stop technology.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling This chip is used for:.
  • power modules.

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Datasheet Details

Part number SIGC68T170R3E
Manufacturer Infineon
File Size 155.80 KB
Description IGBT
Datasheet download datasheet SIGC68T170R3E Datasheet
Additional preview pages of the SIGC68T170R3E datasheet.

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Full PDF Text Transcription

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SIGC68T170R3E IGBT3 Power Chip Features:  1700V Trench & Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules Applications:  drives Chip Type VCE IC SIGC68T170R3E 1700V 50A Die Size 8.23 x 8.25 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 8.23 x 8.25 4 x ( 2.94 x 2.97 ) 1.18 x 1.09 mm2 67.
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