SIGC76T60R3 Datasheet PDF

FEATURES

:
● 600V Trench & Field Stop technology
● low VCE(sat)
● low turn-off losses
● short tail current
● positive temperature coefficient
● easy paralleling 3 This chip is used for:
● power module C

APPLICATIONS

:
● drives G E Chip Type SIGC76T60R3 VCE 600V ICn 150A Die Size 7.87 x 9.69 mm2 Package sawn on foil Ordering Code Q67050A4343-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 7.87 x 9.69 ( 3.344 x 1.938 ) x 4 ( 3.344 x 2.128 ) x 4 1.615 x 0.817 76.3 / 60 70 150 90 173 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm de...