SIGC81T120R2CS Datasheet PDF

FEATURES

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● 1200V NPT technology 175µm chip
● low turn-off losses
● short tail current
● positive temperature coefficient
● easy paralleling
● integrated gate resistor This chip is used for:
● IGBT Modules

APPLICATIONS

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● drives, SMPS, resonant applications C G E Chip Type VCE ICn 50A Die Size 9.08 X 8.98 mm2 Package SIGC81T120R2CS 1200V Ordering Code Q67050sawn on foil A4050-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 9.08 X 8.98 8 x (2.6 x 1.78) 1.46 x 0.8 81.5 / 63.5 175 150 90 167 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month µm mm grd mm 2 Edited by INFINEON...