SIGC81T60SNC - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Features

600V NPT technology.
100µm chip.
short circuit prove.
positive temperature coefficient.
easy paralleling SIGC81T60SNC This chip is used for:.
IGBT-Modules.

Infineon

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Datasheet Details

Part number	SIGC81T60SNC
Manufacturer	Infineon
File Size	76.11 KB
Description	IGBT
Datasheet	SIGC81T60SNC Datasheet
Additional preview pages of the SIGC81T60SNC datasheet.

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Full PDF Text Transcription

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IGBT Chip in NPT-technology FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling SIGC81T60SNC This chip is used for: • IGBT-Modules Applications: • drives C G E Chip Type SIGC81T60SNC VCE ICn Die Size 600V 100A 8.99 x 8.99 mm2 Package Ordering Code sawn on foil Q67050-A4164A003 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 8.99 x 8.99 mm2 80.82 / 72.6 8x( 1.77x2.82 ) 0.78 x 1.

Published: Jun 9, 2020 |