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SIGC84T120R3E - IGBT

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) 2.2 Change wafer size to 200 mm 2.3 Additional basic types L7677M, L7677T, L7677E; new gate pad des

Features

  • 1200V Trench & Field Stop technology.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling This chip is used for:.
  • power modules.

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Datasheet Details

Part number SIGC84T120R3E
Manufacturer Infineon
File Size 181.89 KB
Description IGBT
Datasheet download datasheet SIGC84T120R3E Datasheet
Additional preview pages of the SIGC84T120R3E datasheet.

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Full PDF Text Transcription

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SIGC84T120R3E IGBT3 Power Chip Features:  1200V Trench & Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules Applications:  drives Chip Type VCE IC SIGC84T120R3E 1200V 75A Die Size 9.13 x 9.15 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 9.13 x 9.15 8 x (3.736 x 1.864) 1.319 x 0.820 mm2 83.
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