Datasheet Summary
SKP10N60 SKB10N60, SKW10N60
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
- 75% lower Eoff pared to previous generation bined with low conduction losses
- Short circuit withstand time
- 10 µs
- Designed for:
- Motor controls
- Inverter
- NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
- Very soft, fast recovery anti-parallel EmCon diode
Type SKP10N60 SKB10N60 SKW10N60
VCE IC VCE(sat) Tj Package
600V 10A
2.2V
150°C TO-220AB
TO-263AB
TO-247AC
Maximum Ratings
Parameter
Collector-emitter voltage DC collector current TC = 25°C...
