Infineon Technologies SKW15N60
Fast IGBT
| Part No. | SKW15N60 |
|---|---|
| Datasheet | SKW15N60 Download |
| Manufacturer |  Infineon Technologies |
| Description | Fast IGBT |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg -55...+150 °C 1) VCE 600V IC 15A VCE(sat) 2.3V Tj 150°C Package TO-220AB TO-263AB TO-247AC Ordering Code Q67040-S4251 Q67040-S4252 Q67040-S4243 Symbol VCE IC Value 600 31 15 Unit V A ICpul s IF 62 62 31 15 IFpul s VGE tSC Ptot 62 ±20 10 139 V µs W VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02 SKP15N60, SKB15N60 SKW15N60 Max. Value Unit Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient SMD version,...
