Infineon Technologies SKW20N60
Fast IGBT
| Part No. | SKW20N60 |
|---|---|
| Datasheet | SKW20N60 Download |
| Manufacturer |  Infineon Technologies |
| Description | Fast IGBT |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Operating junction and storage temperature Tj , Tstg -55...+150 °C Ts 260 °C 2 C G E PG-TO-247-3-1 (TO-247AC) VCE 600V IC 20A VCE(sat) 2.4V Tj 150°C Marking K20N60 Package PG-TO-247-3-21 Symbol VCE IC Value 600 40 20 Unit V A ICpul s IF 80 80 40 20 IFpul s VGE tSC Ptot 80 ±20 10 179 V µs W VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2_1 Apr 06 SKW20N60 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, juncti...
