Infineon Technologies SN7002N
Small-Signal-Transistor
| Part No. | SN7002N |
|---|---|
| Datasheet | SN7002N Download |
| Manufacturer |  Infineon Technologies |
| Description | Small-Signal-Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID TA=25°C TA=70°C Pulsed drain current ID puls TA=25°C Reverse diode dv/dt dv/dt IS=0.2A, VDS=48V, di/dt=200A/µs, Tjmax=150°C Gate source voltage VGS ESD Class (JESD22-A114-HBM) Power dissipation TA=25°C Operating and storage temperature Ptot Tj , Tstg Value 0.2 0.16 0.8 6 ±20 0 (<250V) 0.36 -55... +150 Unit A kV/µs V W °C Rev. 2.7 Page 1 2023-02-03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - ambient at minimal footprint SN7002N Symbol Values Unit min. typ. max. RthJA - - 350 K/WELECTRICAL CHARACTERISTICS
, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=250µA Gate threshold voltage, VGS = VDS ID=26µA Zero gate voltage drain current VDS=60V, VGS=0, Tj=25°C VDS=60V, VGS=0, Tj=150°C Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resi...
