SPA04N60C2
SPA04N60C2 is Cool MOS Power Transistor manufactured by Infineon.
Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
P-TO220-3-31
Product Summary VDS @ Tjmax 650 R DS(on) ID
P-TO263-3-2
V Ω A
0.95 4.5
P-TO220-3-1
1 P-TO220-3-31
Type SPP04N60C2 SPB04N60C2 SPA04N60C2
Package P-TO220-3-1 P-TO263-3-2
Ordering Code Q67040-S4304 Q67040-S4305
Marking 04N60C2 04N60C2 04N60C2
P-TO220-3-31 Q67040-S4330
Maximum Ratings Parameter Symbol ID Value SPP_B SPA Unit
Continuous drain current
TC = 25 °C TC = 100 °C
A 4.5 2.8 4.51) 2.81) 9 130 0.4 4.5 6 ±20
±30
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID =3.6A, VDD =50V
ID puls EAS EAR IAR
9 130 0.4 4.5 6 ±20
±30
A m J
Avalanche energy, repetitive t AR limited by Tjmax 2)
ID =4.5A, VDD =50V
Avalanche current, repetitive t AR limited by Tjmax Reverse diode dv/dt
IS = 4.5 A, VDS < VDD , di/dt=100A/µs, Tjmax =150°C
A V/ns V W dv/dt
VGS VGS Ptot
Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC =...