Infineon Technologies SPA11N65C3
Power Transistor
| Part No. | SPA11N65C3 |
|---|---|
| Datasheet | SPA11N65C3 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=2.5A, VDD=50V Avalanche energy, repetitive tAR limited by T 2) jmax ID=4A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg Value SPP_I SPA 11 111) 7 71) 33 33 340 340 Unit A A mJ 0.6 0.6 4 4 A ±20 ±20 V ±30 ±30 125 33 W -55...+150 °C Rev. 2.91 Page 1 2009-11-30 SPP11N65C3,SPA11N65C3 SPI11N65C3MAXIMUM RATINGS
Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Solderin...
