Infineon Technologies SPA11N80C3
Power Transistor
| Part No. | SPA11N80C3 |
|---|---|
| Datasheet | SPA11N80C3 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● New revolutionary high voltage technology● Extreme dv/dt rated
● High peak current capability
● Qualified according to JEDEC1) for target applications
● Pb-free lead plating; RoHS compliant
● Ultra low gate charge
● Ultra low effective capacitances
● Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed for:
● Industrial application with high DC bulk voltage
● Switching Application ( i.e. active clamp forward ) Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ SPA11N80C3 800 V 0.45 Ω 64 nC Type SPA11N80C3 Package PG-TO220-3 Marking 11N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current2) ID Pulsed drain current3) I D,pulse Avalanche energy, single pulse Avalanche energy, repetitive t 3),4) AR Avalanche current, repetitive t 3),4) AR MOSFET dv /dt ruggedness E AS E AR I AR dv /dt Gate source voltage V GS T C=25 °C T
