Infineon Technologies SPA20N60CFD
Power Transistor
| Part No. | SPA20N60CFD |
|---|---|
| Datasheet | SPA20N60CFD Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● New revolutionary high voltage technology● Intrinsic fast-recovery body diode
● Extremely low reverse recovery charge Product Summary VDS RDS(on),max ID1) 600 V 0.22 W 20.7 A
● Ultra low gate charge
● Extreme dv /dt rated PG-TO220-3-31
● High peak current capability
● Periodic avalanche rated
● Qualified for industrial grade applications according to JEDEC0)
● Pb-free lead plating; RoHS compliant Type SPA20N60CFD Package Ordering Code Marking PG-TO220-3-31 SP000216361 20N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed drain current2) ID I D,pulse T C=25 °C T C=100 °C T C=25 °C Avalanche energy, single pulse E AS I D=10 A, V DD=50 V Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR E AR I AR Drain source voltage slope dv /dt I D=20 A, V DD=50 V I D=20.7 A, V DS=480 V, T j=125 °C Reverse diode dv /dt dv /dt Maximum diode commutation speed di /dt Gate source voltage V GS I S=20.7 A, V DS=480 V, T j=125 °C static AC (f >1 Hz) Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg Value 20.7 13.
