Infineon Technologies SPB02N60C3
Cool MOS Power Transistor
| Part No. | SPB02N60C3 |
|---|---|
| Datasheet | SPB02N60C3 Download |
| Manufacturer |  Infineon Technologies |
| Description | Cool MOS Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 1.35 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 1.8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage static VGS Gate source voltage AC (f >1Hz) VGS Power dissipation, TC = 25°C Operating and storage temperature Ptot Tj , Tstg Value Unit A 1.8 1.1 5.4 50 mJ 0.07 1.8 A ±20 V ±30 25 W -55... +150 °C Page 1 2003-10-02 Final data SPP02N60C3 SPB02N60C3MAXIMUM RATINGS
Parameter Drain Source voltage slope VDS = 480 V, ID = 1.8 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 3) Symbol dv/dt Value 50 Unit V/ns Symbol RthJC RthJA RthJA Tsold Val...
