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SPB03N60C3 Datasheet PDF

Infineon Technologies SPB03N60C3

Cool MOS& Power Transistor

Part No. SPB03N60C3
Datasheet SPB03N60C3 Download
Manufacturer
Infineon Technologies
Description Cool MOS& Power Transistor
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SPB03N60C3 datasheet page 1 preview

MAXIMUM RATINGS

Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID 3.2 2 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg 9.6 100 0.2 3.2 ±20 ±30 38 Value SPP_B SPA Unit A 3.21) 21) 9.6 100 0.2 3.2 ±20 ±30 29.7 W °C A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=2.4A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=3.2A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature -55...+150 Page 1 2003-10-02 Final data

MAXIMUM RATINGS

Parameter Drain Source voltage slope V DS = 480 V, I D = 3.2 A, Tj = 125 °C SPP03N60C3, SPB03N60C3 SPA03N60C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on...
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