Infineon Technologies SPB04N50C3
Power Transistor
| Part No. | SPB04N50C3 |
|---|---|
| Datasheet | SPB04N50C3 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=3.4A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=4.5A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg Value SPP_B SPA 4.5 2.8 13.5 130 4.51) 2.81) 13.5 130 0.4 0.4 4.5 4.5 ±20 ±20 ±30 ±30 50 31 -55...+150 Unit A A mJ A V W °C Page 1 2003-10-07 Final data SPP04N50C3, SPB04N50C3 SPA04N50C3MAXIMUM RATINGS
Parameter Drain Source voltage slope VDS = 400 V, ID = 4.5 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling...
