Infineon Technologies SPB07N60C3
Cool MOS Power Transistor
| Part No. | SPB07N60C3 |
|---|---|
| Datasheet | SPB07N60C3 Download |
| Manufacturer |  Infineon Technologies |
| Description | Cool MOS Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=7.3A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 6) ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Value SPB 7.3 4.6 21.9 230 0.5 7.3 ±20 ±30 83 -55...+150 15 Unit A A mJ A V W °C V/ns Rev. 2.5 Page 1 2005-09-14 SPB07N60C3
