Infineon Technologies SPB07N60S5
Cool MOS Power Transistor
| Part No. | SPB07N60S5 |
|---|---|
| Datasheet | SPB07N60S5 Download |
| Manufacturer |  Infineon Technologies |
| Description | Cool MOS Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse ID = - A, VDD = 50 V EAS Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 7.3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage VGS Gate source voltage AC (f >1Hz) VGS Power dissipation, TC = 25°C Operating and storage temperature Ptot Tj , Tstg Value 7.3 4.6 14.6 230 0.5 7.3 ±20 ±30 83 -55... +150 Unit A mJ A V W °C Rev. 2.3 Page 1 2005-07-21 SPB07N60S5MAXIMUM RATINGS
Parameter Dra
