Infineon Technologies SPB10N10
SIPMOS Power-Transistor
| Part No. | SPB10N10 |
|---|---|
| Datasheet | SPB10N10 Download |
| Manufacturer |  Infineon Technologies |
| Description | SIPMOS Power-Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 10.3 7.8 Unit A Pulsed drain current TC=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg 41.2 60 6 ±20 50 -55... +175 55/175/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =10.3 A , VDD =25V, RGS =25 Reverse diode dv/dt IS =10.3A, VDS =80V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-01-31 Preliminary data SPI10N10 SPP10N10,SPB10N10 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area F) Symbol min. RthJC RthJA RthJA - Values typ. max. 3 62 62 40 Unit K/WELECTRICAL CHARACTERISTICS
, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =1mA Symbol min.
