Infineon Technologies SPB30N03
SIPMOS Power Transistor
| Part No. | SPB30N03 |
|---|---|
| Datasheet | SPB30N03 Download |
| Manufacturer |  Infineon Technologies |
| Description | SIPMOS Power Transistor |
| Buy | Stock & Price |
FEATURES
● N channel● Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 30 V A Enhancement mode RDS(on) 0.023 Ω
● Avalanche rated
● dv/dt rated
● 175˚C operating temperature Type SPP30N03 SPB30N03 Package Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S P-TO220-3-1 Q67040-S4736-A2 Tube P-TO263-3-2 Q67040-S4736-A3 Tape and Reel
MAXIMUM RATINGS
, at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Symbol Value 30 30 120 145 7.5 6 kV/µs mJ Unit A ID TC = 25 ˚C, TC = 100 ˚C 1) Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse ID = 30 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 30 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 ˚C Gate source voltage Power dissipation VGS Ptot T j , Tstg ±20 75 -55... +175 55/175/56 V W ˚C TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 05.99 SPP 30N03...
