Infineon Technologies SPB47N10
SIPMOS Power-Transistor
| Part No. | SPB47N10 |
|---|---|
| Datasheet | SPB47N10 Download |
| Manufacturer |  Infineon Technologies |
| Description | SIPMOS Power-Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 47 33 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Page 1 188 400 17.5 6 ±20 175 -55... +175 55/175/56 2001-08-24 kV/µs V W °C mJ Avalanche energy, single pulse ID =47 A , VDD =25V, RGS =25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =47A, VDS =0V, di/dt=200A/µs Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) SPI47N10 SPP47N10,SPB47N10 Symbol min. RthJC RthJA RthJA - Values typ. max. 0.85 62 62 40 Unit K/WELECTRICAL CHARACTERISTICS
, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =2mA Symbol min.
