Infineon Technologies SPB70N10L
SIPMOS Power-Transistor
| Part No. | SPB70N10L |
|---|---|
| Datasheet | SPB70N10L Download |
| Manufacturer |  Infineon Technologies |
| Description | SIPMOS Power-Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 70 50 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Page 1 280 700 25 6 ±20 250 -55... +175 55/175/56 2001-08-24 kV/µs V W °C mJ Avalanche energy, single pulse ID =70 A , VDD =25V, RGS =25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =70A, VDS =0V, di/dt=200A/µs Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Preliminary data SPI70N10L SPP70N10L,SPB70N10L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJC RthJA RthJA - Values typ. max. 0.6 62.5 62 40 Unit K/WELECTRICAL CHARACTERISTICS
, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =2mA Symbol min.
