Infineon Technologies SPD02N60S5
Cool MOS Power Transistor
| Part No. | SPD02N60S5 |
|---|---|
| Datasheet | SPD02N60S5 Download |
| Manufacturer |  Infineon Technologies |
| Description | Cool MOS Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 1.35 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 1.8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage VGS Gate source voltage AC (f >1Hz) VGS Power dissipation, TC = 25°C Ptot Operating and storage temperature Tj , Tstg Value 1.8 1.1 3.2 50 0.07 1.8 ±20 ±30 25 -55... +150 Unit A mJ A V W °C Rev. 2.5 Page 1 2008-04-07 SPU02N60S5 SPD02N60S5MAXIMUM RATINGS
Parameter Drain Source voltage slope VDS = 480 V, ID = 1.8 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, *) 1.6 mm (0.063 in.) from case for 10s Symbol dv/dt Value 20 Unit V/ns Symbol RthJC RthJA RthJA Tsold Values Unit...
