Infineon Technologies SPD04N60C2
Cool MOS Power Transistor
| Part No. | SPD04N60C2 |
|---|---|
| Datasheet | SPD04N60C2 Download |
| Manufacturer |  Infineon Technologies |
| Description | Cool MOS Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
, at TC = 25°C, unless otherwise specified Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 4.5 2.8 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =3.6A, VDD =50V ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg 9 130 0.4 4.5 6 ±20 50 -55... +150 A V/ns V W °C mJ Avalanche energy, repetitive tAR limited by Tjmax 1) ID =4.5A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS =4.5A, VDS < VDD , di/dt=100A/µs, Tjmax=150°C Gate source voltage Power dissipation, TC = 25°C Operating and storage temperature Page 1 2002-10-07 Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10sELECTRICAL CHARACTERISTICS
, at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA SPD04N60C2 SPU04N60C2 Symbol min.
