Infineon Technologies SPD06N80C3
Cool MOS Power Transistor
| Part No. | SPD06N80C3 |
|---|---|
| Datasheet | SPD06N80C3 Download |
| Manufacturer |  Infineon Technologies |
| Description | Cool MOS Power Transistor |
| Buy | Stock & Price |
FEATURES
● New revolutionary high voltage technology● Extreme dv/dt rated
● High peak current capability
● Qualified according to JEDEC for target applications Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ 800 V 0.9 W 31 nC
● Pb-free lead plating; RoHS compliant; Halogen free mold compound
● Ultra low gate charge
● Ultra low effective capacitances PG-TO252-3 CoolMOSTM 800V designed for:
● Industrial application with high DC bulk voltage
● Switching Application ( i.e. active clamp forward ) Type SPD06N80C3 Package PG-TO252-3 Marking 06N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T A=25 °C Pulsed drain current2) I D,pulse T A=100 °C T A=25 °C Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness E AS E AR I AR dv /dt I D=1.2 A, V DD=50 V I D=6 A, V DD=50 V V DS=0…640 V Gate source voltage V GS static AC (f >1 Hz) Power dissipation P tot T A=25 °C Operating and storage temperature T j, T stg Value 6 3.8 18 230 0.2 6 50 ±20 ±30 83 -55 ...
