Infineon Technologies SPD08N05L
SIPMOS-R POWER TRANSISTOR
| Part No. | SPD08N05L |
|---|---|
| Datasheet | SPD08N05L Download |
| Manufacturer |  Infineon Technologies |
| Description | SIPMOS-R POWER TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● N channel● Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 8.4 V Ω A Enhancement mode Level
● Avalanche rated
● Logic
● dv/dt rated
● 175˚C operating temperature Type SPD08N05L SPU08N05L Package P-TO252 P-TO251 Ordering Code Q67040-S4134 Packaging Tape and Reel Pin 1 G Pin 2 D Pin 3 S Q67040-S4182-A2 Tube MaximumRatings , at Tj = 25 ˚C, unless otherwise specified Symbol Parameter Continuous drain current Value 8.4 5.9 34 35 2.4 6 Unit A ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse mJ ID = 8.4 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs IS = 8.4 A, VDS = 40 V, di/dt = 200 A/µs, Tjmax = 175 ˚C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 24 -55... +175 55/175/56 V W ˚C TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 06.99 SPD 08N05L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Symbol min.
