Infineon Technologies SPD08N10
SIPMOS Power Transistor
| Part No. | SPD08N10 |
|---|---|
| Datasheet | SPD08N10 Download |
| Manufacturer |  Infineon Technologies |
| Description | SIPMOS Power Transistor |
| Buy | Stock & Price |
FEATURES
● N channel● SPD 08N10 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 100 0.3 8.4 V Ω A Enhancement mode rated
● Avalanche rated
● dv/dt Type SPD08N10 SPU08N10 Package P-TO252 P-TO251 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4126-A2 Tape and Reel Q67040-S4118-A2 Tube
MAXIMUM RATINGS
, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current Value 8.4 5.4 33.6 30 4 6 ±20 40 -55... +175 55/150/56 Unit A ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse mJ ID = 8.4 A, VDD = 25 V, R GS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs V W ˚C IS = 8.4 A, V DS = 80 V, di/dt = 200 A/µs Gate source voltage Power dissipation VGS Ptot Tj , Tstg TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 05.99 SPD 08N10 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded Symbol min.
