Infineon Technologies SPD08N50C3
Power Transistor
| Part No. | SPD08N50C3 |
|---|---|
| Datasheet | SPD08N50C3 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
APPLICATIONS
Type SPD08N50C3 Package PG-TO252 Ordering Code Q67040-S4569 Marking 08N50C3MAXIMUM RATINGS
, at TC = 25°C, unless otherwise specified Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax1) ID=7.6A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 6) ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Value 7.6 4.6 22.8 230 0.5 7.6 ±20 ±30 83 -55... +150 15 Unit A mJ A V W °C V/ns a) non-Halogen free (OPN: SPD08N50C3BT), Halogen free (OPN: SPD08N50C3AT) Rev. 2.7 Page 1 2020-05-15 SPD08N50C3MAXIMUM RATINGS
Parameter Drain Source voltage slope VDS = 400 V, ID = 7.6 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambi...
