Infineon Technologies SPD09P06PL
SIPMOS Power-Transistor
| Part No. | SPD09P06PL |
|---|---|
| Datasheet | SPD09P06PL Download |
| Manufacturer |  Infineon Technologies |
| Description | SIPMOS Power-Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value -9.7 -6.8 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg -38.8 70 4.2 6 ±20 42 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID =-9.7 A , VDD =-25V, RGS =25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =-9.7A, VDS =-48, di/dt=200A/µs, Tjmax =175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2001-07-02 Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) SPD09P06PL SPU09P06PL Values min. typ. max. 3.6 100 75 50 K/W Unit Symbol RthJC RthJA RthJA -ELECTRICAL CHARACTERISTICS
, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =-250µA Symbol min.
