Infineon Technologies SPD14N06S2-80
OptiMOS Power-Transistor
| Part No. | SPD14N06S2-80 |
|---|---|
| Datasheet | SPD14N06S2-80 Download |
| Manufacturer |  Infineon Technologies |
| Description | OptiMOS Power-Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C Symbol ID Value 17 12 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 68 43 3 6 ±20 30 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=14A, V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 1) Reverse diode d v/dt IS=14A, V DS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPD14N06S2-80 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Symbol min. RthJC RthJA RthJA - Values typ. 2.14 max. 3.2 100 75 50 Unit K/WELECTRICAL CHARACTERISTICS
, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min.
