SPD50N06S2L-13 - Power Transistor

Infineon

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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SPD50N06S2L-13 power transistor by Infineon - Datasheet Preview

Datasheet Details

Part number	SPD50N06S2L-13
Manufacturer	Infineon
File Size	262.58 KB
Description	Power Transistor
Datasheet	SPD50N06S2L-13 Datasheet

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OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Avalanche rated • dv/dt rated SPD50N06S2L-13 Product Summary VDS 55 V RDS(on) 12.7 mΩ ID 50 A P- TO252 -3-11 Type Package Ordering Code Marking SPD50N06S2L-13 P- TO252 -3-11 Q67060- S7421 PN06L13 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) ID TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=50 A , VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=50A, VDS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 50 50 200 240 13.